mar. 2003 mitsubishi hvigbt modules cm600dy-34h high power switching use insulated type i c ................................................................... 600a v ces ....................................................... 1700v insulated type 2-elements in a pack application inverters, converters, dc choppers, induction heating, dc to dc converters. cm600dy-34h hvigbt modules (high voltage insulated gate bipolar transistor modules) outline drawing & circuit diagram dimensions in mm hvigbt (high voltage insulated gate bipolar transistor) modules cm g1 g2 e1 e1 e2 e2 c1 4 - m8 nuts 6 - m4 nuts c2 c2 c1 c1 e1 e1 g1 c1 c2 e2 e2 g2 c2 114 31.5 57 53 44 40 28 14 20 30 140 130 16 18 5 38 11.85 55.2 11.5 35 5 57 0.25 57 0.25 124 0.25 6 - 7 mounting holes circuit diagram label
mar. 2003 mitsubishi hvigbt modules cm600dy-34h high power switching use insulated type hvigbt modules (high voltage insulated gate bipolar transistor modules) maximum ratings (tj = 25 c) v ge = 0v v ce = 0v dc, t c = 95 c pulse (note 1) pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value 1700 20 600 1200 600 1200 6900 ?0 ~ +150 ?0 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 v v a a a a w c c v n? n? n? kg collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass collector current emitter current symbol item conditions unit ratings v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 850v, i c = 600a, v ge = 15v v cc = 850v, i c = 600a v ge1 = v ge2 = 15v r g = 3.3 ? resistive load switching operation i e = 600a, v ge = 0v i e = 600a die / dt = ?200a / s junction to case, igbt part (per 1/2 module) junction to case, fwdi part (per 1/2 module) case to fin, conductive grease applied (per 1/2 module) i c = 60ma, v ce = 10v i c = 600a, v ge = 15v (note 4) v ce = 10v v ge = 0v 15 0.5 3.58 1.20 1.50 2.00 0.60 3.12 2.00 0.018 0.056 ma a nf nf nf c s s s s v s c k/w k/w k/w 2.75 3.30 70 10.0 3.8 3.3 2.40 100 0.016 5.5 4.5 6.5 collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge contact thermal resistance min typ max i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) electrical characteristics (tj = 25 c) symbol item conditions v ge(th) v ce(sat) limits unit note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. thermal resistance hvigbt (high voltage insulated gate bipolar transistor) modules v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso
mar. 2003 mitsubishi hvigbt modules cm600dy-34h high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules 800 1000 1200 400 200 0 10 0 2 468 600 800 1000 1200 400 200 0 600 20 0481216 020 16 12 8 4 10 8 6 4 2 0 t j = 25 c t j = 25 c v ge = 13v v ge = 11v v ge = 12v v ge = 10v v ge = 9v v ge = 8v v ge = 7v v ge = 14v v ge = 15v v ge = 20v i c = 1200a i c = 600a i c = 240a v ce = 10v t j = 25 c t j = 125 c 10 1 23 10 1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 c ies c oes c res v ge = 0v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz capacitance characteristics ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) 0 5 4 3 1 2 0 200 400 600 800 1000 1200 v ge = 15v t j = 25 c t j = 125 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) collector-emitter saturation voltage characteristics ( typical ) collector-emitter voltage v ce ( v ) collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) 0 200 400 600 800 1000 1200 free-wheel diode forward characteristics ( typical ) emitter-collector voltage v ec ( v ) emitter current i e ( a ) 5 4 3 2 1 0 t j = 25 c t j = 125 c performance curves
mar. 2003 mitsubishi hvigbt modules cm600dy-34h high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 t d(off) v cc = 850v, v ge = 15v r g = 3.3 ? , t j = 125 c inductive load t d(on) t r t f v cc = 850v, t j = 125 c inductive load v ge = 15v, r g = 3.3 ? t rr i rr 7 5 3 2 10 2 7 5 5 3 2 10 3 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 single pulse t c = 25 c r th(j c)q = 0.018k/ w r th(j c)r = 0.056k/ w (per 1/2 module) 20 16 12 8 4 0 4000 5000 3000 0 1000 2000 v cc = 850v i c = 600a half-bridge switching time characteristics ( typical ) switching times ( s ) collector current i c ( a ) reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) transient thermal impedance characteristics normalized transient thermal impedance z th(j c) time ( s ) gate charge characteristics ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) 0 0.2 0.4 0.6 0.8 1.0 half-bridge switching energy characteristics ( typical ) current ( a ) switching energy ( j/p ) 0 200 400 1200 800 1000 600 v cc = 850v, v ge = 15v, r g = 3.3 ? , tj = 125 c, inductive load e on e off e rec 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1020304050 gate resistance ( ? ) half-bridge switching energy characteristics ( typical ) switching energy ( j/p ) v cc = 850v, i c = 600a, v ge = 15v, tj = 125 c, inductive load e on e off e rec
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